Nexperia · FETs & Power MOSFETs · MPN PMH600UNEH
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| Gate Charge(Qg) | 310pC@4.5V |
|---|---|
| Drain to Source Voltage | 20V |
| Current - Continuous Drain(Id) | 800mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 950mV |
| Pd - Power Dissipation | 625mW |
| Reverse Transfer Capacitance (Crss@Vds) | 4.6pF |
| RDS(on) | 620mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 21.3pF |
20V 800mA 950mV 625mW 620mΩ@4.5V 1 N-channel SOT-8001-3 Single FETs, MOSFETs RoHS