Nexperia PMH550UPEH

Nexperia · FETs & Power MOSFETs · MPN PMH550UPEH

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Specifications

Gate Charge(Qg)900pC@4.5V
Drain to Source Voltage20V
Output Capacitance(Coss)11.2pF
Current - Continuous Drain(Id)800mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))950mV
Pd - Power Dissipation660mW
Reverse Transfer Capacitance (Crss@Vds)7.7pF
RDS(on)640mΩ@4.5V
Number1 P-Channel
Input Capacitance(Ciss)54.8pF
TypeP-Channel

Technical details

20V 800mA 950mV 660mW 640mΩ@4.5V 1 P-Channel P-Channel DFN0606-3 Single FETs, MOSFETs RoHS

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