Nexperia PMH550UNEH

Nexperia · FETs & Power MOSFETs · MPN PMH550UNEH

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Specifications

Gate Charge(Qg)400pC@4V
Drain to Source Voltage30V
Current - Continuous Drain(Id)770mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))950mV
Pd - Power Dissipation380mW
Reverse Transfer Capacitance (Crss@Vds)3.7pF
RDS(on)670mΩ@4.5V
Number1 N-channel
Input Capacitance(Ciss)30.3pF

Technical details

N-Channel 30V 770mA 380mW Surface Mount DFN0606-3

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