Nexperia PMGD780SN,115

Nexperia · FETs & Power MOSFETs · MPN PMGD780SN,115

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Specifications

Current - Continuous Drain(Id)490mA
RDS(on)920mΩ@10V
Pd - Power Dissipation410mW
Gate Threshold Voltage (Vgs(th))2.5V
Drain to Source Voltage60V
Reverse Transfer Capacitance (Crss@Vds)3.5pF
Number2 N-Channel
Input Capacitance(Ciss)23pF
Gate Charge(Qg)1.05nC@10V
Operating Temperature-55℃~+150℃

Technical details

N-Channel Array 60V 0.49A 0.41W SOT-363(SC-88)

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