Nexperia · FETs & Power MOSFETs · MPN PMGD290XN,115
No reviews yet — be the first to review Nexperia PMGD290XN,115.
| Current - Continuous Drain(Id) | 860mA |
|---|---|
| Pd - Power Dissipation | 410mW |
| RDS(on) | 350mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 1.5V |
| Drain to Source Voltage | 20V |
| Number | 2 N-Channel |
| Input Capacitance(Ciss) | 34pF |
| Gate Charge(Qg) | 720pC@4.5V |
| Operating Temperature | -55℃~+150℃ |
860mA 410mW 350mΩ@4.5V 1.5V 2 N-Channel SOT-363 FET, MOSFET Arrays RoHS