Nexperia PMGD290UCEAX

Nexperia · FETs & Power MOSFETs · MPN PMGD290UCEAX

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Specifications

Current - Continuous Drain(Id)725mA;500mA
RDS(on)380mΩ@4.5V
Pd - Power Dissipation320mW
Gate Threshold Voltage (Vgs(th))750mV;800mV
Drain to Source Voltage20V
Reverse Transfer Capacitance (Crss@Vds)7pF;12pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)83pF;87pF
Gate Charge(Qg)680pC@4.5V;1.14nC@4.5V
Operating Temperature-55℃~+150℃

Technical details

380mΩ@4.5V 320mW 1 N-Channel + 1 P-Channel SOT-363 FET, MOSFET Arrays RoHS

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