Nexperia PMGD280UN,115

Nexperia · FETs & Power MOSFETs · MPN PMGD280UN,115

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Specifications

Current - Continuous Drain(Id)870mA
RDS(on)660mΩ@1.8V
Pd - Power Dissipation400mW
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage20V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)-
Number2 N-Channel
Input Capacitance(Ciss)-
Gate Charge(Qg)890pC@4.5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)-

Technical details

N-Channel Array 20V 0.87A 0.4W TSSOP-6(SOT-363)

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