Nexperia PMGD175XNEX

Nexperia · FETs & Power MOSFETs · MPN PMGD175XNEX

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Specifications

Current - Continuous Drain(Id)950mA
Pd - Power Dissipation390mW
RDS(on)252mΩ@4.5V
Gate Threshold Voltage (Vgs(th))1.25V
Drain to Source Voltage30V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)9pF
Number2 N-Channel
Input Capacitance(Ciss)81pF
Gate Charge(Qg)1.65nC@4.5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)13pF

Technical details

950mA 390mW 252mΩ@4.5V 1.25V 2 N-Channel SC-70-6(SOT-363) FET, MOSFET Arrays RoHS

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