Nexperia · FETs & Power MOSFETs · MPN PMGD175XNE115
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| Drain to Source Voltage | 30V |
|---|---|
| Gate Charge(Qg) | 1.65nC@4.5V |
| Output Capacitance(Coss) | 13pF |
| Current - Continuous Drain(Id) | 950mA |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.25V |
| Pd - Power Dissipation | 260mW |
| Reverse Transfer Capacitance (Crss@Vds) | 9pF |
| RDS(on) | 252mΩ@4.5V |
| Input Capacitance(Ciss) | 81pF |
| Type | N-Channel |
30V 950mA 1.25V 260mW 252mΩ@4.5V N-Channel Single FETs, MOSFETs RoHS