Nexperia PMGD175XNE115

Nexperia · FETs & Power MOSFETs · MPN PMGD175XNE115

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)1.65nC@4.5V
Output Capacitance(Coss)13pF
Current - Continuous Drain(Id)950mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))1.25V
Pd - Power Dissipation260mW
Reverse Transfer Capacitance (Crss@Vds)9pF
RDS(on)252mΩ@4.5V
Input Capacitance(Ciss)81pF
TypeN-Channel

Technical details

30V 950mA 1.25V 260mW 252mΩ@4.5V N-Channel Single FETs, MOSFETs RoHS

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