Nexperia PMDXB950UPEZ

Nexperia · FETs & Power MOSFETs · MPN PMDXB950UPEZ

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Specifications

Current - Continuous Drain(Id)500mA
RDS(on)1.02Ω@4.5V
Pd - Power Dissipation265mW
Gate Threshold Voltage (Vgs(th))950mV
Drain to Source Voltage20V
Reverse Transfer Capacitance (Crss@Vds)8pF
Number2 P-Channel
Input Capacitance(Ciss)43pF
Gate Charge(Qg)-
Operating Temperature-55℃~+150℃

Technical details

P-Channel 20V 500mA 265mW Surface Mount DFN1010-6

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