Nexperia PMDXB600UNEZ

Nexperia · FETs & Power MOSFETs · MPN PMDXB600UNEZ

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Specifications

Current - Continuous Drain(Id)600mA
RDS(on)470mΩ@4.5V
Pd - Power Dissipation265mW
Gate Threshold Voltage (Vgs(th))700mV
Drain to Source Voltage20V
Reverse Transfer Capacitance (Crss@Vds)4.2pF
Number2 N-Channel
Input Capacitance(Ciss)21.3pF
Gate Charge(Qg)700pC@4.5V
Operating Temperature-55℃~+150℃

Technical details

N-Channel Array 20V 600mA 265mW Surface Mount DFN1010-6

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