Nexperia PMDXB600UNELZ

Nexperia · FETs & Power MOSFETs · MPN PMDXB600UNELZ

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Specifications

Current - Continuous Drain(Id)600mA
Pd - Power Dissipation265mW
RDS(on)470mΩ@4.5V
Gate Threshold Voltage (Vgs(th))450mV
Drain to Source Voltage20V
Reverse Transfer Capacitance (Crss@Vds)4.2pF
Number2 N-Channel
Input Capacitance(Ciss)21.3pF
Gate Charge(Qg)700pC@4.5V
Operating Temperature-55℃~+150℃

Technical details

600mA 265mW 470mΩ@4.5V 450mV 2 N-Channel DFN1010B-6 FET, MOSFET Arrays RoHS

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