Nexperia PMDXB590UPEZ

Nexperia · FETs & Power MOSFETs · MPN PMDXB590UPEZ

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Specifications

Current - Continuous Drain(Id)570mA
Pd - Power Dissipation6W
RDS(on)770mΩ@4.5V
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage20V
TypeP-Channel
Reverse Transfer Capacitance (Crss@Vds)7.8pF
Input Capacitance(Ciss)53.5pF
Gate Charge(Qg)800pC@0V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)9.6pF

Technical details

570mA 6W 770mΩ@4.5V 1V DFN-6(1x1) FET, MOSFET Arrays RoHS

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