Nexperia · FETs & Power MOSFETs · MPN PMDXB590UPEZ
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| Current - Continuous Drain(Id) | 570mA |
|---|---|
| Pd - Power Dissipation | 6W |
| RDS(on) | 770mΩ@4.5V |
| Gate Threshold Voltage (Vgs(th)) | 1V |
| Drain to Source Voltage | 20V |
| Type | P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 7.8pF |
| Input Capacitance(Ciss) | 53.5pF |
| Gate Charge(Qg) | 800pC@0V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 9.6pF |
570mA 6W 770mΩ@4.5V 1V DFN-6(1x1) FET, MOSFET Arrays RoHS