Nexperia PMDXB550UNEZ

Nexperia · FETs & Power MOSFETs · MPN PMDXB550UNEZ

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Specifications

Current - Continuous Drain(Id)590mA
RDS(on)670mΩ@4.5V
Pd - Power Dissipation285mW
Gate Threshold Voltage (Vgs(th))950mV
Drain to Source Voltage30V
Reverse Transfer Capacitance (Crss@Vds)-
Number2 N-Channel
Input Capacitance(Ciss)30.3pF
Gate Charge(Qg)1.05nC@4.5V
Operating Temperature-55℃~+150℃

Technical details

N-Channel Array 30V 590mA 285mW Surface Mount DFN1010-6

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