Nexperia PMDXB550UNE/S500147

Nexperia · FETs & Power MOSFETs · MPN PMDXB550UNE/S500147

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Specifications

Drain to Source Voltage30V
Gate Charge(Qg)1.05nC@4.5V
Current - Continuous Drain(Id)590mA
Output Capacitance(Coss)5.8pF
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))950mV
Pd - Power Dissipation410mW
Reverse Transfer Capacitance (Crss@Vds)4.2pF
RDS(on)670mΩ@4.5V
TypeN-Channel

Technical details

30V 590mA 950mV 410mW 670mΩ@4.5V N-Channel Single FETs, MOSFETs RoHS

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