Nexperia PMDXB290UNEZ

Nexperia · FETs & Power MOSFETs · MPN PMDXB290UNEZ

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Specifications

Current - Continuous Drain(Id)930mA
Pd - Power Dissipation370mW
RDS(on)320mΩ@4.5V
Gate Threshold Voltage (Vgs(th))1V
Drain to Source Voltage20V
TypeN-Channel
Gate Charge(Qg)900pC@4.5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)8.2pF

Technical details

930mA 370mW 320mΩ@4.5V 1V DFN1010B-6 FET, MOSFET Arrays RoHS

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