Nexperia PMDXB1200UPEZ

Nexperia · FETs & Power MOSFETs · MPN PMDXB1200UPEZ

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Specifications

Current - Continuous Drain(Id)410mA
RDS(on)1.2Ω@4.5V
Pd - Power Dissipation285mW
Gate Threshold Voltage (Vgs(th))450mV
Drain to Source Voltage30V
Reverse Transfer Capacitance (Crss@Vds)4.2pF
Number2 P-Channel
Input Capacitance(Ciss)43.2pF
Gate Charge(Qg)1.2nC@4.5V
Operating Temperature-55℃~+150℃

Technical details

P-Channel 30V 410mA 285mW Surface Mount SOT1216

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