Nexperia · FETs & Power MOSFETs · MPN PMDXB1200UPEZ
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| Current - Continuous Drain(Id) | 410mA |
|---|---|
| RDS(on) | 1.2Ω@4.5V |
| Pd - Power Dissipation | 285mW |
| Gate Threshold Voltage (Vgs(th)) | 450mV |
| Drain to Source Voltage | 30V |
| Reverse Transfer Capacitance (Crss@Vds) | 4.2pF |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | 43.2pF |
| Gate Charge(Qg) | 1.2nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
P-Channel 30V 410mA 285mW Surface Mount SOT1216