Nexperia · FETs & Power MOSFETs · MPN PMDT670UPE,115
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| Current - Continuous Drain(Id) | 550mA |
|---|---|
| RDS(on) | 850mΩ@4.5V |
| Pd - Power Dissipation | 330mW |
| Gate Threshold Voltage (Vgs(th)) | 1.3V |
| Drain to Source Voltage | 20V |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 2 P-Channel |
| Input Capacitance(Ciss) | 87pF |
| Gate Charge(Qg) | 1.14nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
550mA 850mΩ@4.5V 330mW 1.3V 2 P-Channel SOT-666 FET, MOSFET Arrays RoHS