Nexperia PMDT290UNEYL

Nexperia · FETs & Power MOSFETs · MPN PMDT290UNEYL

No reviews yet — be the first to review Nexperia PMDT290UNEYL.

Specifications

Current - Continuous Drain(Id)800mA
RDS(on)290mΩ@4.5V
Pd - Power Dissipation330mW
Gate Threshold Voltage (Vgs(th))950mV
Drain to Source Voltage20V
Reverse Transfer Capacitance (Crss@Vds)7pF
Number2 N-Channel
Input Capacitance(Ciss)83pF
Gate Charge(Qg)680pC@4.5V
Operating Temperature-55℃~+150℃

Technical details

800mA 290mΩ@4.5V 330mW 950mV 2 N-Channel SOT-666 FET, MOSFET Arrays RoHS

Related FETs & Power MOSFETs