Nexperia PMDT290UNE,115

Nexperia · FETs & Power MOSFETs · MPN PMDT290UNE,115

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Specifications

Current - Continuous Drain(Id)800mA
RDS(on)380mΩ@4.5V
Pd - Power Dissipation500mW
Gate Threshold Voltage (Vgs(th))950mV
Drain to Source Voltage20V
TypeN-Channel
Reverse Transfer Capacitance (Crss@Vds)7pF
Number2 N-Channel
Input Capacitance(Ciss)83pF
Gate Charge(Qg)680pC@4.5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)-

Technical details

N-Channel Array 20V 800mA 500mW Surface Mount SOT-666

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