Nexperia PMDT290UCEH

Nexperia · FETs & Power MOSFETs · MPN PMDT290UCEH

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Specifications

Current - Continuous Drain(Id)800mA;550mA
RDS(on)380mΩ@4.5V;850mΩ@4.5V
Pd - Power Dissipation330mW;1.09W
Gate Threshold Voltage (Vgs(th))950mV;1.3V
Drain to Source Voltage20V
Reverse Transfer Capacitance (Crss@Vds)-
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)83pF;87pF
Gate Charge(Qg)680pC@4.5V;1.14nC@4.5V
Operating Temperature-55℃~+150℃

Technical details

1 N-Channel + 1 P-Channel SOT-666 FET, MOSFET Arrays RoHS

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