Nexperia · FETs & Power MOSFETs · MPN PMDT290UCE,115
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| Current - Continuous Drain(Id) | 800mA;550mA |
|---|---|
| RDS(on) | 290mΩ@4.5V;670mΩ@4.5V |
| Pd - Power Dissipation | 500mW |
| Gate Threshold Voltage (Vgs(th)) | 950mV |
| Drain to Source Voltage | 20V |
| Reverse Transfer Capacitance (Crss@Vds) | 7pF;12pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 83pF |
| Gate Charge(Qg) | 680pC@4.5V |
| Operating Temperature | -55℃~+150℃ |
500mW 950mV 1 N-Channel + 1 P-Channel SOT-666 FET, MOSFET Arrays RoHS