Nexperia PMDPB80XP,115

Nexperia · FETs & Power MOSFETs · MPN PMDPB80XP,115

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Specifications

Current - Continuous Drain(Id)3.7A
RDS(on)80mΩ@4.5V
Pd - Power Dissipation485mW
Gate Threshold Voltage (Vgs(th))600mV
Drain to Source Voltage20V
Reverse Transfer Capacitance (Crss@Vds)53pF
Number2 P-Channel
Input Capacitance(Ciss)550pF
Gate Charge(Qg)5.7nC@4.5V
Operating Temperature-55℃~+150℃

Technical details

3.7A 80mΩ@4.5V 485mW 600mV 2 P-Channel DFN2020-6(2x2) FET, MOSFET Arrays RoHS

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