Nexperia PMDPB58UPE,115

Nexperia · FETs & Power MOSFETs · MPN PMDPB58UPE,115

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Specifications

Current - Continuous Drain(Id)4.5A
RDS(on)58mΩ@4.5V
Pd - Power Dissipation515mW
Gate Threshold Voltage (Vgs(th))950mV
Drain to Source Voltage20V
Reverse Transfer Capacitance (Crss@Vds)66pF
Number2 P-Channel
Input Capacitance(Ciss)804pF
Gate Charge(Qg)9.5nC@4.5V
Operating Temperature-55℃~+150℃

Technical details

4.5A 58mΩ@4.5V 515mW 950mV 2 P-Channel HUSON-6(2x2) FET, MOSFET Arrays RoHS

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