Nexperia PMDPB55XP,115

Nexperia · FETs & Power MOSFETs · MPN PMDPB55XP,115

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Specifications

Current - Continuous Drain(Id)3.4A
RDS(on)55mΩ@4.5V
Pd - Power Dissipation490mW
Gate Threshold Voltage (Vgs(th))650mV
Drain to Source Voltage20V
TypeP-Channel
Reverse Transfer Capacitance (Crss@Vds)64pF
Number2 P-Channel
Input Capacitance(Ciss)785pF
Gate Charge(Qg)16.5nC@5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)80pF

Technical details

P-Channel 20V 490mW Surface Mount DFN-6(2x2)

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