Nexperia · FETs & Power MOSFETs · MPN PMCXB900UEZ
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| Current - Continuous Drain(Id) | 600mA;500mA |
|---|---|
| RDS(on) | 620mΩ@4.5V |
| Pd - Power Dissipation | 265mW |
| Gate Threshold Voltage (Vgs(th)) | 950mV |
| Drain to Source Voltage | 20V |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 21.3pF |
| Gate Charge(Qg) | 700pC@4.5V |
| Operating Temperature | -55℃~+150℃ |
N-Channel+P-Channel Array 20V 600mA 500mA 265mW Surface Mount DFN1010-6