Nexperia · FETs & Power MOSFETs · MPN PMCXB1000UEZ
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| Current - Continuous Drain(Id) | 590mA;410mA |
|---|---|
| RDS(on) | 670mΩ@4.5V;1.4Ω@4.5V |
| Pd - Power Dissipation | 285mW |
| Gate Threshold Voltage (Vgs(th)) | 950mV |
| Drain to Source Voltage | 30V |
| Type | N-Channel + P-Channel |
| Reverse Transfer Capacitance (Crss@Vds) | 4.2pF |
| Number | 1 N-Channel + 1 P-Channel |
| Input Capacitance(Ciss) | 30.3pF;43.2pF |
| Gate Charge(Qg) | 1.05nC@4.5V;1.2nC@4.5V |
| Operating Temperature | -55℃~+150℃ |
| Output Capacitance(Coss) | 5.8pF;5.9pF |
285mW 950mV 1 N-Channel + 1 P-Channel DFN1010-6 FET, MOSFET Arrays RoHS