Nexperia PMCXB1000UE147

Nexperia · FETs & Power MOSFETs · MPN PMCXB1000UE147

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Specifications

Drain to Source Voltage30V
Configuration-
Gate Charge(Qg)1.2nC@4.5V
Output Capacitance(Coss)5.9pF
Current - Continuous Drain(Id)590mA
Operating Temperature --55℃~+150℃
Gate Threshold Voltage (Vgs(th))950mV
Pd - Power Dissipation410mW
Reverse Transfer Capacitance (Crss@Vds)4.2pF
RDS(on)1.4Ω@4.5V
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)43.2pF

Technical details

30V 590mA 950mV 410mW 1.4Ω@4.5V 1 N-Channel + 1 P-Channel N-Channel + P-Channel Single FETs, MOSFETs RoHS

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