Nexperia PMCPB5530X,115

Nexperia · FETs & Power MOSFETs · MPN PMCPB5530X,115

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Specifications

Current - Continuous Drain(Id)5.3A;4.5A
RDS(on)26mΩ@4.5V;55mΩ@4.5V
Pd - Power Dissipation490mW
Gate Threshold Voltage (Vgs(th))650mV
Drain to Source Voltage20V
TypeN-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds)74pF;53pF
Number1 N-Channel + 1 P-Channel
Input Capacitance(Ciss)660pF;785pF
Gate Charge(Qg)14.4nC@4.5V;8.1nC@5V
Operating Temperature-55℃~+150℃
Output Capacitance(Coss)87pF;63pF

Technical details

N-Channel+P-Channel Array 20V 490mW Surface Mount DFN-6(2x2)

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