Nexperia · FETs & Power MOSFETs · MPN PMCM650VNE
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| Gate Charge(Qg) | 15.4nC@4.5V |
|---|---|
| Drain to Source Voltage | 12V |
| Current - Continuous Drain(Id) | 8.4A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Pd - Power Dissipation | 12.5W |
| Reverse Transfer Capacitance (Crss@Vds) | 305pF |
| RDS(on) | 25mΩ@4.5V |
| Input Capacitance(Ciss) | 1.06nF |
| Type | N-Channel |
12V 8.4A 900mV 12.5W 25mΩ@4.5V N-Channel Single FETs, MOSFETs RoHS