Nexperia · FETs & Power MOSFETs · MPN PMCM6501VNE/S500Z
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| Configuration | - |
|---|---|
| Gate Charge(Qg) | 24nC@4.5V |
| Drain to Source Voltage | 12V |
| Output Capacitance(Coss) | 350pF |
| Current - Continuous Drain(Id) | 9.6A |
| Operating Temperature - | -55℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 900mV |
| Pd - Power Dissipation | 1.3W |
| Reverse Transfer Capacitance (Crss@Vds) | 330pF |
| RDS(on) | 18mΩ@4.5V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 920pF |
12V 9.6A 900mV 1.3W 18mΩ@4.5V 1 N-channel N-Channel Single FETs, MOSFETs RoHS