Nexperia PMBT5550,235

Nexperia · Transistors (BJTs) · MPN PMBT5550,235

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Specifications

Current - Collector Cutoff50nA
Transition frequency(fT)100MHz
Collector - Emitter Voltage VCEO140V
Emitter-Base Voltage VEBO6V
DC Current Gain60
Pd - Power Dissipation250mW
Number1 NPN
typeNPN
Current - Collector(Ic)300mA
Operating Temperature-65℃~+150℃
Vce Saturation(VCE(sat))250mV

Technical details

140V 60 1 NPN NPN 300mA SOT-23 Single Bipolar Transistors RoHS

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