Nexperia PMBT3904RAZ

Nexperia · Transistors (BJTs) · MPN PMBT3904RAZ

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Specifications

Current - Collector Cutoff50nA
DC Current Gain100
Pd - Power Dissipation325mW
Collector - Emitter Voltage VCEO40V
Emitter-Base Voltage VEBO6V
Transition frequency(fT)300MHz
Vce Saturation(VCE(sat))75mV
typeNPN
Number2 NPN
Current - Collector(Ic)200mA
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor NPN 40V 200mA 300MHz 325mW Surface Mount DFN1412-6

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