Nexperia PMBT2907AYSX

Nexperia · Transistors (BJTs) · MPN PMBT2907AYSX

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Specifications

Current - Collector Cutoff10uA
DC Current Gain300
Pd - Power Dissipation550mW
Collector - Emitter Voltage VCEO60V
Emitter-Base Voltage VEBO5V
Transition frequency(fT)200MHz
Vce Saturation(VCE(sat))1.6V
typePNP
Number2 PNP
Current - Collector(Ic)600mA
Operating Temperature-55℃~+150℃

Technical details

Bipolar (BJT) Transistor PNP 60V 600mA 200MHz 550mW TSSOP-6(SOT-363)

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