Nexperia PMBF170

Nexperia · FETs & Power MOSFETs · MPN PMBF170

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Specifications

Gate Charge(Qg)-
Drain to Source Voltage60V
Output Capacitance(Coss)18pF
Current - Continuous Drain(Id)300mA
Operating Temperature --65℃~+150℃
Gate Threshold Voltage (Vgs(th))2V
Pd - Power Dissipation830mW
Reverse Transfer Capacitance (Crss@Vds)7.5pF
RDS(on)2.8Ω@10V;3.8Ω@4.5V
Number1 N-channel
Input Capacitance(Ciss)25pF
TypeN-Channel

Technical details

60V 300mA 2V 830mW 1 N-channel N-Channel SOT-23 Single FETs, MOSFETs RoHS

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