Nexperia PIMD2,115

Nexperia · Transistors (BJTs) · MPN PIMD2,115

No reviews yet — be the first to review Nexperia PIMD2,115.

Specifications

DC Current Gain60
Output Voltage(VO(on))-
Input Resistor22kΩ
Number1 NPN Pre-Biased, 1 PNP Pre-Biased
Resistor Ratio1
Pd - Power Dissipation-
Voltage - Input(Max)(VI(off))1.1V
Current - Collector(Ic)100mA
Input Voltage (VI(on)@Ic,Vce)1.7V
Collector - Emitter Voltage VCEO50V
Operating Temperature-55℃~+150℃

Technical details

60 1 NPN Pre-Biased, 1 PNP Pre-Biased 100mA 50V SOT-457 Bipolar Transistor Arrays, Pre-Biased RoHS

Related Transistors (BJTs)