Nexperia · FETs & Power MOSFETs · MPN PHT6NQ10T,135
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| Gate Charge(Qg) | 21nC@80V |
|---|---|
| Drain to Source Voltage | 100V |
| Current - Continuous Drain(Id) | 6.5A |
| Operating Temperature - | -65℃~+150℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 8.3W |
| Reverse Transfer Capacitance (Crss@Vds) | 61pF |
| RDS(on) | 90mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 633pF |
N-Channel 100V 6.5A 8.3W Surface Mount SOT-223