Nexperia PHKD3NQ10T,518

Nexperia · FETs & Power MOSFETs · MPN PHKD3NQ10T,518

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Specifications

Gate Charge(Qg)21nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)3A
Operating Temperature --65℃~+150℃
Gate Threshold Voltage (Vgs(th))3V
Pd - Power Dissipation2W
Reverse Transfer Capacitance (Crss@Vds)61pF
RDS(on)70mΩ@10V
Number2 N-Channel
Input Capacitance(Ciss)633pF

Technical details

100V 3A 3V 2W 70mΩ@10V 2 N-Channel SOT-96 Single FETs, MOSFETs RoHS

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