Nexperia · FETs & Power MOSFETs · MPN PHD101NQ03LT,118
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| Gate Charge(Qg) | 23nC@5V |
|---|---|
| Drain to Source Voltage | 30V |
| Current - Continuous Drain(Id) | 75A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 1.9V |
| Pd - Power Dissipation | 166W |
| Reverse Transfer Capacitance (Crss@Vds) | 225pF |
| RDS(on) | 4.5mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 2.18nF |
30V 75A 1.9V 166W 4.5mΩ@10V 1 N-channel DPAK Single FETs, MOSFETs RoHS