Nexperia PHD101NQ03LT,118

Nexperia · FETs & Power MOSFETs · MPN PHD101NQ03LT,118

No reviews yet — be the first to review Nexperia PHD101NQ03LT,118.

Specifications

Gate Charge(Qg)23nC@5V
Drain to Source Voltage30V
Current - Continuous Drain(Id)75A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))1.9V
Pd - Power Dissipation166W
Reverse Transfer Capacitance (Crss@Vds)225pF
RDS(on)4.5mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.18nF

Technical details

30V 75A 1.9V 166W 4.5mΩ@10V 1 N-channel DPAK Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs