Nexperia PHB27NQ10T,118

Nexperia · FETs & Power MOSFETs · MPN PHB27NQ10T,118

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Specifications

Gate Charge(Qg)30nC@10V
Drain to Source Voltage100V
Current - Continuous Drain(Id)28A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation107W
Reverse Transfer Capacitance (Crss@Vds)-
RDS(on)50mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)1.24nF

Technical details

N-Channel 100V 28A 107W Surface Mount D2PAK

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