Nexperia · FETs & Power MOSFETs · MPN PHB21N06LT,118
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| Gate Charge(Qg) | 9.4nC@5V |
|---|---|
| Drain to Source Voltage | 55V |
| Current - Continuous Drain(Id) | 19A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | - |
| Pd - Power Dissipation | 56W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 70mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 650pF |
55V 19A 56W 70mΩ@10V 1 N-channel D2PAK Single FETs, MOSFETs RoHS