Nexperia PHB20NQ20T118

Nexperia · FETs & Power MOSFETs · MPN PHB20NQ20T118

No reviews yet — be the first to review Nexperia PHB20NQ20T118.

Specifications

Gate Charge(Qg)65nC@10V
Drain to Source Voltage200V
Output Capacitance(Coss)207pF
Current - Continuous Drain(Id)20A
Operating Temperature --55℃~+175℃
Gate Threshold Voltage (Vgs(th))4V
Pd - Power Dissipation150W
Reverse Transfer Capacitance (Crss@Vds)90pF
RDS(on)130mΩ@10V
Number1 N-channel
Input Capacitance(Ciss)2.47nF
TypeN-Channel

Technical details

200V 20A 4V 150W 130mΩ@10V 1 N-channel N-Channel D2PAK Single FETs, MOSFETs RoHS

Related FETs & Power MOSFETs