Nexperia · FETs & Power MOSFETs · MPN PHB191NQ06LT,118
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| Gate Charge(Qg) | 95.6nC@5V |
|---|---|
| Drain to Source Voltage | 55V |
| Current - Continuous Drain(Id) | 75A |
| Operating Temperature - | -55℃~+175℃ |
| Gate Threshold Voltage (Vgs(th)) | 2V |
| Pd - Power Dissipation | 300W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| RDS(on) | 3.7mΩ@10V |
| Number | 1 N-channel |
| Input Capacitance(Ciss) | 7.665nF |
55V 75A 2V 300W 3.7mΩ@10V 1 N-channel D2PAK Single FETs, MOSFETs RoHS