Nexperia PEMZ7,315

Nexperia · Transistors (BJTs) · MPN PEMZ7,315

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Specifications

Current - Collector Cutoff50uA
DC Current Gain200
Collector - Emitter Voltage VCEO12V
Pd - Power Dissipation300mW
Emitter-Base Voltage VEBO6V
Vce Saturation(VCE(sat))220mV
typeNPN+PNP
Number1 NPN + 1 PNP
Current - Collector(Ic)500mA
Operating Temperature-65℃~+150℃

Technical details

200 12V 300mW NPN+PNP 500mA SOT-666-6 Bipolar Transistor Arrays RoHS

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