Nexperia PEMH9,115

Nexperia · Transistors (BJTs) · MPN PEMH9,115

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Specifications

DC Current Gain100
Input Resistor13kΩ
Resistor Ratio4.7
Number-
Pd - Power Dissipation300mW
Current - Collector(Ic)100mA
Collector - Emitter Voltage VCEO50V
Operating Temperature-55℃~+150℃

Technical details

100 300mW 100mA 50V SOT-666 Bipolar Transistor Arrays, Pre-Biased RoHS

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