Nexperia PEMH11,115

Nexperia · Transistors (BJTs) · MPN PEMH11,115

No reviews yet — be the first to review Nexperia PEMH11,115.

Specifications

DC Current Gain30
Output Voltage(VO(on))-
Input Resistor10kΩ
Number2 NPN (Pre-Biased)
Resistor Ratio1
Pd - Power Dissipation300mW
Voltage - Input(Max)(VI(off))1.1V
Current - Collector(Ic)100mA
Input Voltage (VI(on)@Ic,Vce)1.8V
Collector - Emitter Voltage VCEO50V
Operating Temperature-

Technical details

30 2 NPN (Pre-Biased) 300mW 100mA 50V SOT-666 Bipolar Transistor Arrays, Pre-Biased RoHS

Related Transistors (BJTs)