Nexperia PDTD143EUX

Nexperia · Transistors (BJTs) · MPN PDTD143EUX

No reviews yet — be the first to review Nexperia PDTD143EUX.

Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain70
Operating Temperature-55℃~+175℃
Current - Collector(Ic)500mA
Output Voltage(VO(on))-
Input Resistor6.1kΩ
Number1 NPN (Pre-Biased)
Resistor Ratio1
Pd - Power Dissipation425mW
Voltage - Input(Max)(VI(off))1.5V@100uA,5V
Input Voltage (VI(on)@Ic,Vce)1.6V@20mA,0.3V

Technical details

50V 70 500mA 1 NPN (Pre-Biased) 425mW SOT-323-3 Single, Pre-Biased Bipolar Transistors RoHS

Related Transistors (BJTs)