Nexperia PDTD143ETR

Nexperia · Transistors (BJTs) · MPN PDTD143ETR

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Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain60
Operating Temperature-55℃~+175℃
Current - Collector(Ic)500mA
Output Voltage(VO(on))-
Input Resistor4.7kΩ
Number1 NPN (Pre-Biased)
Resistor Ratio1.1
Pd - Power Dissipation460mW
Input Voltage (VI(on)@Ic,Vce)2.2V@20mA,0.3V
Voltage - Input(Max)(VI(off))1.5V@100uA,5V

Technical details

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 50V 500mA 460mW Surface Mount SOT-23

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