Nexperia PDTD143EQAZ

Nexperia · Transistors (BJTs) · MPN PDTD143EQAZ

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Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain60
Operating Temperature-55℃~+150℃
Current - Collector(Ic)500mA
Output Voltage(VO(on))-
Input Resistor4.7kΩ
Number1 NPN (Pre-Biased)
Resistor Ratio1
Pd - Power Dissipation940mW
Voltage - Input(Max)(VI(off))2.2V@20mA,0.3V
Input Voltage (VI(on)@Ic,Vce)1.5V@100uA,5V

Technical details

50V 60 500mA 1 NPN (Pre-Biased) 940mW DFN1010D-3 Single, Pre-Biased Bipolar Transistors RoHS

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