Nexperia PDTD113ZUX

Nexperia · Transistors (BJTs) · MPN PDTD113ZUX

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Specifications

Collector - Emitter Voltage VCEO50V
DC Current Gain70
Operating Temperature-55℃~+175℃
Current - Collector(Ic)500mA
Output Voltage(VO(on))-
Input Resistor1kΩ
Number1 NPN (Pre-Biased)
Resistor Ratio10
Pd - Power Dissipation425mW
Input Voltage (VI(on)@Ic,Vce)1.4V@20mA,0.3V
Voltage - Input(Max)(VI(off))1V@100uA,5V

Technical details

Pre-Biased Bipolar Transistor (BJT) 1 NPN Pre-Biased Transistor 50V 500mA 425mW Surface Mount SOT-323

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